Everspin Tech (NASDAQ:MRAM)nologies, Inc. is a developer and supplier of magnetoresistive random-access memory (MRAM) solutions, offering non-volatile memory products designed to replace or complement traditional flash and DRAM in a variety of applications. The company’s core technology is based on spin-transfer torque (STT) and spin–orbit torque (SOT) mechanisms, which deliver high-speed write/read performance, unlimited endurance, and data retention without power. EverSpin’s product portfolio includes stand-alone MRAM devices as well as embedded MRAM IP cores for integration into system-on-chip (SoC) designs.
EverSpin’s MRAM offerings target markets that demand high reliability and low latency, including automotive electronics, aerospace and defense systems, industrial control, edge computing, and Internet of Things (IoT) devices. The company partners with major foundries and fab-level assembly houses to ensure production scalability, while working closely with electronics manufacturers to validate memory solutions under stringent environmental and performance tests. EverSpin also provides design support and reference platforms enabling rapid customer adoption of its MRAM products.
Founded in 2012 and headquartered in Austin, Texas, EverSpin has been at the forefront of next-generation memory development. Over the years, the company achieved key technology milestones, including the demonstration of sub-20nm MRAM cells and integration of MRAM into leading semiconductor process nodes. In early 2023, EverSpin completed its Nasdaq listing under the ticker MRAM, positioning the company for accelerated growth as demand for low-power, high-performance memory escalates globally.
Under the leadership of co-founder and Chief Executive Officer Bill Cartwright, EverSpin has assembled a management team with deep expertise in semiconductor research, development, and manufacturing. The company continues to expand its global footprint, supporting customers across North America, Asia, and Europe. EverSpin’s strategic focus remains on advancing MRAM technology to meet evolving end-market requirements and on forging partnerships that drive broad adoption of its non-volatile memory solutions.