Everspin Tech Q3 2025 Earnings Report

Everspin Tech EPS Results

• Actual EPS: N/A
• Consensus EPS: $0.05
• Beat/Miss: N/A
• One Year Ago EPS: N/A

Everspin Tech Revenue Results

• Actual Revenue: N/A
• Expected Revenue: N/A
• Beat/Miss: N/A
• YoY Revenue Growth: N/A

Everspin Tech Announcement Details

• Quarter: Q3 2025
• Date: 10/29/2025
• Time: Before Market Opens
• Conference Call Date: Wednesday, October 29, 2025
• Conference Call Time: 5:00PM ET

Everspin Tech (NASDAQ:MRAM)nologies, Inc. (NASDAQ: MRAM) is a semiconductor company specializing in the design, development and marketing of magnetoresistive random access memory (MRAM) solutions. Established in 2008 as a spin-out from Freescale Semiconductor, the company pioneered commercial MRAM products and continues to advance the technology through successive generations, including Toggle MRAM and spin-transfer torque (STT) MRAM. Everspin’s non-volatile memory devices offer a unique combination of performance, endurance and data retention for a variety of applications.

The company’s product portfolio includes discrete MRAM chips, embedded MRAM IP for integration into system-on-chip (SoC) designs and companion devices that leverage MRAM’s fast write speeds and low power consumption. Everspin’s Toggle MRAM has been widely adopted in industrial and storage controller markets, while STT-MRAM targets broader use cases in data centers, networking equipment, aerospace and automotive electronics. These memory solutions are designed to replace or complement existing technologies such as SRAM, DRAM and flash in applications requiring high reliability and rapid data access.

Headquartered in Chandler, Arizona, Everspin operates a global supply chain with wafer fabrication and assembly partnerships in North America and Asia. The company works closely with OEMs, semiconductor foundries and third-party designers to integrate MRAM into a wide array of next-generation electronics. Everspin’s ongoing research and development efforts focus on scaling MRAM density and performance to address evolving market demands for non-volatile memory in high-performance computing and edge devices.